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| N Channel Enhancement Mode MOS Transistors Product Summary Part Number VN2010L BS107 Siliconix VN2010L/BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 Features D D D D D Low On Resistance: 6 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Benefits D D D D D Low Offset Voltage Full Voltage Operation Easily Driven Without Buffer Low Error Voltage No High Temperature Run Away" Applications D High Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO 226AA (TO 92) S G D 1 TO 92 18RM (TO 18 Lead Form) D G S 1 2 2 3 Top View VN2010L 3 Top View BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain Source Voltage Gate Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Power Dissipation Maximum Junction to Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. a C Symbol VDS VGS TA= 25_C TA= 1 0 0 _C TA= 25_C TA= 100_C ID IDM PD RthJA TJ, Tstg VN2010L 200 "30 0.19 0.12 0.8 0.8 0.32 156 -55 to 150 BS107 200 "25 0.12 Unit V A 0.5 250 urrent W _C/W _C P-38283--Rev. B (08/15/94) 1 VN2010L/BS107 Specificationsa Limits VN2010L Siliconix BS107 Parameter Static Drain Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Drain Leakage Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)DSS VGS(th) IGSS IDSX IDSS ID(on) rDS(on) gfs gos VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "15 V VDS = 70 V, VGS = 0.2 V VDS = 130 V, VGS = 0 V VDS = 160 V, VGS = 0 V TJ = 125_C VDS = 10 V, VGS = 10 V VGS = 2.8 V, ID = 0.02 A VGS = 4.5 V, ID = 0.05 A TJ = 125_C VDS = 15 V, ID = 0.1 A VDS = 15 V, ID = 0.05 A 220 1.2 200 0.8 1.8 "10 200 0.8 3 V "10 1 0.03 1 100 0.7 6 6 11 180 0.15 125 10 20 0.1 28 nA Zero G Z Gate V l Voltage D i C Drain Current On State Drain Currentc mA A A Drain Source O R i DiS On Resistancec Forward Transconductancec W Common Source Output Conductancec S mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 V, VGS = 0 V f = 1 MH 25 V V, MHz 35 9 1 60 30 15 pF F Switchingd Turn On Time Turn Off Time tON tOFF VDD = 25 V, RL = 250 W ID ^ 0.1 A, VGEN = 10 V RG = 25 W 5 21 20 30 ns Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VNDQ20 2 P-38283--Rev. B (08/15/94) Siliconix VN2010L/BS107 Ohmic Region Characteristics VGS = 10 V 50 5V I D - Drain Current (mA) 4V 6V 3V 40 Typical Characteristics (25_C Unless Otherwise Noted) 0.5 0.4 Output Characteristics for Low Gate Drive TJ = 25C VGS = 2.2 V 2.0 V TJ = 25C I D - Drain Current (A) 0.3 30 1.8 V 1.6 V 1.4 V 0.2 20 0.1 2V 10 1.2 V 1.0 V 0.6 V 0 0 1 2 3 4 5 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain to Source Voltage (V) 500 VDS - Drain to Source Voltage (V) 28 24 20 16 12 8 4 0 50 mA Transfer Characteristics VDS = 15 V TJ = -55C 25C rDS(on) - On Resistance (W ) On Resistance vs. Gate to Source Voltage TJ = 25C I D - Drain Current (mA) 400 125C 300 I D = 500 mA 200 250 mA 100 0 0 1 2 3 4 5 0 4 8 12 16 20 VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V) rDS(on) - Drain Source On Resistance ( W ) 12.5 On Resistance vs. Drain Current rDS(on) - Drain Source On Resistance (Normalized) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 Normalized On Resistance vs. Junction Temperature VGS = 4.5 V I D = 50 mA 10.0 VGS = 10 V 7.5 10 mA 5.0 2.5 0 0 0.2 0.4 0.6 0.8 1.0 ID - Drain Current (A) -50 -10 30 70 110 150 TJ - Junction Temperature (_C) P-38283--Rev. B (08/15/94) 3 VN2010L/BS107 10 VDS = 5 V I D - Drain Current (mA) 50 C - Capacitance (pF) TJ = 150C 1 40 30 C oss 20 10 0.01 0 0.4 0.8 -55C 1.2 1.6 2.0 0 C rss Siliconix Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) Threshold Region 60 Capacitance VGS = 0 V f = 1 MHz C iss 0.1 0C 0 10 20 30 40 50 VGS - Gate to Source Voltage (V) 15.0 VGS - Gate to Source Voltage (V) 12.5 10.0 7.5 5.0 2.5 0 I D = 0.1 A VDS = 100 V 160 V VDS - Drain to Source Voltage (V) 100 50 Gate Charge Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 20 10 5 td(off) tr 2 1 td(on) tf 0.01 0.1 ID - Drain Current (A) 1.0 0 250 500 750 1000 1250 Qg - Total Gate Charge (pC) 1 Normalized Effective Transient Thermal Impedance Normalized Effective Transient Thermal Impedance, Junction to Ambient (TO 226AA) Duty Cycle = 0.5 0.2 0.1 Notes: PDM t1 0.1 0.05 0.02 t2 1. Duty Cycle, D = 0.01 Single Pulse 0.01 0.1 1 10 100 3. TJM - TA = PDMZthJA(t) 2. Per Unit Base = RthJA = 156_C/W t1 t2 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 P-38283--Rev. B (08/15/94) |
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